semiconductor group 1 pnp silicon af transistors bc 327 bc 328 5.91 type marking package 1) pin configuration bc 327 bc 327-16 bc 327-25 bc 327-40 bc 328 bc 328-16 bc 328-25 bc 328-40 q62702-c311 q62702-c311-v3 q62702-c311-v4 q62702-c311-v2 q62702-c312 q62702-c312-v3 q62702-c312-v4 q62702-c312-v2 C to-92 1 2 3 ordering code c b e 1) for detailed information see chapter package outlines. l high current gain l high collector current l low collector-emitter saturation voltage l complementary types: bc 337, bc 338 (npn) 1 2 3
semiconductor group 2 bc 327 bc 328 maximum ratings parameter symbol bc 327 unit collector-emitter voltage v ce0 45 v collector-base voltage v cb0 50 emitter-base voltage v eb0 collector current i c ma base current i b ma total power dissipation, t c = 66 ?c p tot mw junction temperature t j ?c storage temperature range t stg C 65 + 150 thermal resistance junction - ambient r th ja 200 k/w peak collector current i cm a junction - case 1) r th jc 135 peak base current i bm bc 328 25 30 5 800 100 625 150 1 200 values 1) mounted on al heat sink 15 mm 25 mm 0.5 mm.
semiconductor group 3 bc 327 bc 328 electrical characteristics at t a = 25 ?c, unless otherwise specified. C dc current gain 1) i c = 100 ma; v ce = 1 v bc 327/16; bc 328/16 bc 327/25; bc 328/25 bc 327/40; bc 328/40 i c = 300 ma; v ce = 1 v bc 327/16; bc 328/16 bc 327/25; bc 328/25 bc 327/40; bc 328/40 h fe 100 160 250 60 100 170 160 250 350 C C C 250 400 630 C C C v collector-emitter breakdown voltage i c = 10 ma bc 327 bc 328 v (br)ce0 45 25 C C C C na na m a m a collector cutoff current v cb = 25 v bc 328 v cb = 45 v bc 327 v cb = 25 v, t a = 150 ?c bc 328 v cb = 45 v, t a = 150 ?c bc 327 i cb0 C C C C C C C C 100 100 10 10 unit values parameter symbol min. typ. max. dc characteristics collector-base breakdown voltage i c = 100 m a bc 327 bc 328 v (br)cb0 50 30 C C C C emitter-base breakdown voltage i e = 10 m a v (br)eb0 5CC v collector-emitter saturation voltage 1) i c = 500 ma; i b = 50 ma v cesat C C 0.7 base-emitter saturation voltage 1) i c = 500 ma; i b = 50 ma v besat CC2 na emitter cutoff current v eb = 4 v i eb0 C C 100 1) pulse test: t 300 m s, d 2%.
semiconductor group 4 bc 327 bc 328 electrical characteristics at t a = 25 ?c, unless otherwise specified. mhz transition frequency i c = 50 ma, v ce = 5 v, f = 20 mhz f t C 200 C unit values parameter symbol min. typ. max. ac characteristics pf output capacitance v cb = 10 v, f = 1 mhz c obo C12C input capacitance v eb = 0.5 v, f = 1 mhz c ibo C60C
semiconductor group 5 bc 327 bc 328 total power dissipation p tot = f ( t a ; t c ) collector current i c = f ( v be ) v ce = 1 v permissible pulse load r thja = f ( t p ) collector cutoff current i cb0 = f ( t a ) v cb = 45 v
semiconductor group 6 bc 327 bc 328 transition frequency f t = f ( i c ) f = 20 mhz, t a = 25 ?c base-emitter saturation voltage v besat = f ( i c ) h fe = 10 dc current gain h fe = f ( i c ) v ce = 1 v collector-emitter saturation voltage v cesat = f ( i c ) h fe = 10
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